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Non-Debye heat capacity formula refined and applied to GaP, GaAs, GaSb, InP, InAs, and InSb

机译：非德拜热容配方精制并应用于Gap，Gaas，Gasb，Inp，Inas和Insb

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R. Pässler;
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1. Reactive Ion Etching of GaAs, GaSb, InP and InAs in Cl2/Ar Plasma [J] . HONG Ting, ZHANG Yong-gang, LIU Tian-dong 半导体光子学与技术（英文版） . 2004,第003期
2. Non-Debye heat capacity formula refined and applied to GaP, GaAs, GaSb, InP, InAs, and InSb [J] . R. P?ssler AIP Advances . 2013,第8期

机译：改进了非德拜热容公式并应用于GaP，GaAs，GaSb，InP，InAs和InSb
3. Influence of Bi-related impurity states on the bandgap and spin-orbit splitting energy of dilute Ⅲ-Ⅴ-Bi alloys: InP_(1-x)Bi_x, InAs_(1-x)Bi_x, InSb_(1-x)Bi_x and GaSb_(1-x)Bi_x [J] . D.P. Samajdar, S. Dhar Superlattices and microstructures . 2016,第JANa期

机译：Bi相关杂质态对Ⅲ-Ⅴ-Bi稀合金InP_（1-x）Bi_x，InAs_（1-x）Bi_x，InSb_（1-x）Bi_x和GaSb_的能隙和自旋轨道分裂能的影响（1-x）Bi_x
4. Discrimination of Carrier Conduction Mechanisms of InP/InGaAsP/InAs/InP Laser Structure Through src="/images/tex/16633.gif" alt="J"> – src="/images/tex/18630.gif" alt="V"> – src="/images/tex/28848.gif" alt="T"> Measurements [J] . Neslihan Ayarcı, Orhan Özdemir, Kutsal Bozkurt, IEEE Transactions on Electron Devices . 2016,第5期

机译：通过 src =“ / images / tex / 16633.gif” alt =“ J”> – src =“ / images / tex / 18630.gif” alt =“ V”> – src =“ / images / tex / 28848.gif” alt =“ T”> 测量
5. Temperature Dependent Sellmeier Equations for III-V Semiconductors GaN, GaP, GaAs, GaSb, InAs and InSb [C] . Shekhar Guha, Jean Wei, Joel M. Murray Conference on Lasers and Electro-Optics . 2020

机译：III-V半导体的GaN，GaP，GaAs，GaSb，InAs和InSb的温度相关Sellmeier方程
6. The Theoretical Simulation of InAs/GaInSb and InAsN/GaInSb Strained layer Superlattice Band Gaps. [D] . Chestnut, Michael Donnell, II. 2013

机译：InAs / GaInSb和InAsN / GaInSb应变层超晶格带隙的理论模拟。
7. Band-inverted gaps in InAs/GaSb and GaSb/InAs core-shell nanowires [O] . Ning Luo, Guang-Yao Huang, Gaohua Liao, -1

机译：InAs / GaSb和GaSb / InAs核-壳纳米线的能带反转间隙
8. Non-Debye heat capacity formula refined and applied to GaP, GaAs, GaSb, InP, InAs, and InSb [O] . R. Pässler 2013

机译：非德拜热容配方精制并应用于Gap，Gaas，Gasb，Inp，Inas和Insb
9. sp3s and sp3d5s Tight-Binding Parameter Sets for GaAs, AIAs, InAs, GaSb, AISb, InSb, GaP, AIP, InP, for Quantum Dot Simulations [R] . Klimeck, G., Bowen, C., Boykin, T. 2000

机译：sp3s和sp3d5s Gaas，aIa，Inas，Gasb，aIsb，Insb，Gap，aIp，Inp的紧束缚参数集，用于量子点模拟

Non-Debye heat capacity formula refined and applied to GaP, GaAs, GaSb, InP, InAs, and InSb

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